Preview: Simulasi Model : Heterojunction Bipolar Transistor Silikon-Germanium (HBT SiGe) Berdasarkan Pengaturan Lebar Stripe Emiter (We)

Main Author:	Alamsyah, Tossin (-)
Format:	Book
Bahasa:	ind
Terbitan:	Bandung Institut Teknologi Telkom , 2009
Edition:	Juni 2009 Volume 14 Nomor 1
Subjects:	HBT SiGe, Lebar stripe emiter (we), Frekuensi threshold (fr), frekuensi osilasi (fosc), current gain (beta), noise figure minimum (Fn)
Online Access:	http://kin.perpusnas.go.id/DisplayData.aspx?pId=11877&pRegionCode=HABIBIE&pClientId=632