Analisis penskalaan lateral dan vertikal dari rancangan silicon germanium heterojunction bipolar transistor (HBT SiGe) = Lateral and vertical scaling analysis of the silicon germanium heterojunction bipolar transistor's design (HBT's SiGe) = Lateral and vertical scaling analysis of the silicon germanium heterojunction bipolar transistor's design (HBT's SiGe)
| Main Author: | Ahmad Tossin Alamsyah, author |
|---|---|
| Format: | Doctoral Bachelors |
| Terbitan: |
, 2010
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| Subjects: | |
| Online Access: |
http://lib.ui.ac.id/file?file=digital/2016-6/20277931-D1162-Ahmad Tossin Alamsyah.pdf |
Internet
http://lib.ui.ac.id/file?file=digital/2016-6/20277931-D1162-Ahmad Tossin Alamsyah.pdfLokasi
| Koleksi | Repository Skripsi (open) Universitas Indonesia |
|---|---|
| Gedung | Perpustakaan Universitas Indonesia |
| Institusi | Universitas Indonesia |
| Kota | KOTA DEPOK |
| Provinsi | JAWA BARAT |
| Kontak | Butuh informasi lebih lanjut? Hubungi pustakawan institusi ini. |