Analisis penskalaan lateral dan vertikal dari rancangan silicon germanium haterojunction bipolar transistor (HBT'S SIGE) =Lateral and vertical scaling analysis of the silicon germanium heterojunction bipolar transistor's design (HBT's SiGe)

Main Authors: Ahmad Tossin Alamsyah, author, Add author: Djoko Hartanto, promotor, Add author: Nji Raden Poespawati, co-promotor, Add author: Harry Sudibyo S., examiner, Add author: Eko Tjipto Rahardjo, examiner, Add author: Siregar, Masbach R., examiner, Add author: Muhamad Asvial, examiner, Add author: Agus Santoso Tamsir, examiner
Format: Doctoral Bachelors
Terbitan: Fakultas Teknik Universitas Indonesia , 2010
Subjects:
Online Access: https://lib.ui.ac.id/detail?id=132163

Internet

https://lib.ui.ac.id/detail?id=132163

Lokasi

Koleksi Repository Skripsi (open) Universitas Indonesia
Gedung Perpustakaan Universitas Indonesia
Institusi Universitas Indonesia
Kota KOTA DEPOK
Provinsi JAWA BARAT
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