Analisis penskalaan lateral dan vertikal dari rancangan silicon germanium haterojunction bipolar transistor (HBT'S SIGE) =Lateral and vertical scaling analysis of the silicon germa...

oleh Ahmad Tossin Alamsyah, author, Add author: Djoko Hartanto, promotor, Add author: Nji Raden Poespawati, co-promotor, Add author: Harry Sudibyo S., examiner, Add author: Eko Tjipto Rahardjo, examiner, Add author: Siregar, Masbach R., examiner, Add author: Muhamad Asvial, examiner, Add author: Agus Santoso Tamsir, examiner
Terbitan: Fakultas Teknik Universitas Indonesia, 2010