Ahmad Tossin Alamsyah, a. (2010). Analisis penskalaan lateral dan vertikal dari rancangan silicon germanium haterojunction bipolar transistor (HBT'S SIGE) =Lateral and vertical scaling analysis of the silicon germanium heterojunction bipolar transistor's design (HBT's SiGe). Fakultas Teknik Universitas Indonesia.
Chicago Style CitationAhmad Tossin Alamsyah, author. Analisis Penskalaan Lateral Dan Vertikal Dari Rancangan Silicon Germanium Haterojunction Bipolar Transistor (HBT'S SIGE) =Lateral and Vertical Scaling Analysis of the Silicon Germanium Heterojunction Bipolar Transistor's Design (HBT's SiGe). Fakultas Teknik Universitas Indonesia, 2010.
MLA CitationAhmad Tossin Alamsyah, author. Analisis Penskalaan Lateral Dan Vertikal Dari Rancangan Silicon Germanium Haterojunction Bipolar Transistor (HBT'S SIGE) =Lateral and Vertical Scaling Analysis of the Silicon Germanium Heterojunction Bipolar Transistor's Design (HBT's SiGe). Fakultas Teknik Universitas Indonesia, 2010.