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|a 0010-52291060
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|a #a JKPNPNA
|b ind
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|a CB [G] - D.10 09-183
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1 |
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|a Tossin Alamsyah, A.
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| 245 |
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|a Pemodelan Heterojunction Bipolar Transistor (HBT) Si / Si 1-x Gex berdasarkan pengontrolan profile graded silikon dan germanium pada basis /
|c Oleh A. Tossin Alamsyah
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| 260 |
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|c 2009
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| 300 |
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|a ix, 59 lembar ;
|c 29 cm.
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| 500 |
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|a Penelitian disahkan oleh P2M Politeknik Negeri Jakarta.
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| 504 |
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|a Termasuk bibliografi.
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| 710 |
2 |
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|a Politeknik Negeri Jakarta.
|b Penelitian dan Pengabdian Masyarakat.
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| 850 |
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|a JKPNPNA
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| 900 |
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|a 00673nbm**2200012*a*4500
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| 902 |
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|a INDOLI12:20-OCT-11*INDOLI12:20-OCT-11*INDOLI12:20-OCT-11*
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| 999 |
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|a 183/DM[G]/D/09
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