OPTIMASI PARAMETER TEMPERATUR FILAMEN PADA PENUMBUHAN LAPISAN TIPIS POLIKRISTAL SILIKON DENGAN METODE HOT WIRE CELL PECVD
| Main Authors: | Amiruddin, S.; Prodi Fisika, Jurusan PMIPA, FKIP, Universitas Nusa Cendana, Kupang, Usman, I.; Jurusan Fisika, FPMIPA, Universitas Haluoleo, Kendari, Mursal, Mursal; Jurusan Fisika, FPMIPA, Universitas Syiah Kuala, Aceh, Malago, J.D.; Jurusan Fisika, FPMIPA, Universitas Negeri Makassar, Makassar, Winata, Toto; Laboratorium Fisika Material Elektronik, Prodi Fisika, FMIPA, ITB, Bandungv, Sukirno, Sukirno; Laboratorium Fisika Material Elektronik, Prodi Fisika, FMIPA, ITB, Bandung |
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| Format: | Article \\\\\\\\\\\\\\\"application/pdf\\\\\\\\\\\\\\\" eJournal |
| Bahasa: | eng |
| Terbitan: |
Himpunan Fisika Indonesia
, 2013
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| Online Access: |
http://jurnal.fisika-indonesia.org/index.php/JF/article/view/77 |
Daftar Isi:
- Metode Hot Wire Cell PECVD (Plasma Enhanced Chemical Vapor Deposition ) telah berhasil dikembangkan untuk menumbuhkan lapisan tipis polykristal silikon (poly-Si). Lapisan tipis poly-Si ditumbuhkan di atas gelas corning 7059 pada tekanan 300 mTorr. Gas silan (SiH4) 10 % dalam gashidrogen (H2) digunakan sebagai sumber gas. Dalam metode hot wire cell PECVD, gas reaktan didekomposisi dengan filamen tungsten panas yang diletakkan di atas substrat dan paralel dengan system gas masukan. Dari hasil karakterisasi diperoleh bahwa lapisan tipis poly-Si dapat ditumbuhkan pada temperatur filamen 1400 oC sampai 1800 oC dengan temperatur substrat 275 oC. Hasil analisis XRD menunjukkan bahwa intensitas istimewa diperoleh pada orientasi kristal <220>. Nilai tertinggi dari Intensitas puncak (1084 cps), ukuran butir (minor aksis 0,5 μm) dan konduktivitas gelap (0,60x10-5 Scm-1) diperoleh pada temperatur filamen 1800 oC dengan laju deposisi 2,17 nm/s.The Hot wire Cell PECVD method has been developed to grow the poly-Si thin films. The poly-Si thin films were grown on the 7059 corning glass at a deposition pressure of 500 mTorr. Silane (SiH4) gas 10% diluted in hydrogen (H2) gas was used as gas source. In the hot wire cell PECVD method, reactant gases are decomposed as a result of reaction with a heated filament placed above the substrate and paralel to the gas inlet. The characterization results exhibited that the poly-Si thin films could be grown at the filament temperature of 1400 oC to 1800 oC with a substrate temperature of 275 oC. The analysis of XRD result showed that preferential intensity was obtained at the crystal orientation of <220>. The highest values of peak intensity (1084 cps), grains size (minor axis 0.5 μm) and dark conductivity (0.60x10-5 Scm-1) were obtained at the filament temperature of 1800 oC with deposition rate of 2.17 nm/s.