PENGARUH VARIASI TEMPERATUR PENUMBUHAN TERHADAP KARAKTERISTIK SIFAT LISTRIK FILM TIPIS GaN DI ATAS Si (111) DENGAN METODE PA-MOCVD
| Main Author: | Sutanto, Heri |
|---|---|
| Format: | Article PeerReviewed application/pdf |
| Terbitan: |
Department of Physics, Universitas Diponegoro
, 2001
|
| Subjects: | |
| Online Access: |
http://eprints.undip.ac.id/2313/1/Pengaruh_Variasi_Temperatur_Penumbuhan_Terhadap_Karakteristik_Sifat_Listrik_Film_Tipis_GaN_diatas_Si_(111)_Dengan_Metode_PA-MOCVD.pdf http://eprints.undip.ac.id/2313/ |
| ctrlnum |
2313 |
|---|---|
| fullrecord |
<?xml version="1.0"?>
<dc schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><title>PENGARUH VARIASI TEMPERATUR PENUMBUHAN TERHADAP KARAKTERISTIK
SIFAT LISTRIK FILM TIPIS GaN DI ATAS Si (111) DENGAN METODE PA-MOCVD</title><creator>Sutanto, Heri</creator><subject>QC Physics</subject><description>The thin film of galium nitride has been grown on Si(111) substrates by plasma assisted metalorganic chemical vapor deposition in the range temperature 625 – 700 oC. We made ohmic contact by aluminium evaporation on thin film GaN. Electrical characterization of GaN thin film by
Hall efect measurement to measure carrier mobility, carrier concentration and resistivity. From the result Hall characterization that was found that Hall mobility, carrier concentration and resistivity are between 6,7 – 757,8 cm2/V.s, 4,6 x 1018 – 8,8 x 1019 cm-3 and 1,8 x 10-3 – 1,6 x 10-2 ohm cm. The highest Hall mobility is 757,8 cm2/V.s in growth temperature 675 oC.</description><publisher>Department of Physics, Universitas Diponegoro</publisher><date>2001-04</date><type>Journal:Article</type><type>PeerReview:PeerReviewed</type><type>File:application/pdf</type><identifier>http://eprints.undip.ac.id/2313/1/Pengaruh_Variasi_Temperatur_Penumbuhan_Terhadap_Karakteristik_Sifat_Listrik_Film_Tipis_GaN_diatas_Si_(111)_Dengan_Metode_PA-MOCVD.pdf</identifier><identifier>Sutanto, Heri (2001) PENGARUH VARIASI TEMPERATUR PENUMBUHAN TERHADAP KARAKTERISTIK SIFAT LISTRIK FILM TIPIS GaN DI ATAS Si (111) DENGAN METODE PA-MOCVD. BERKALA FISIKA, 4 (2). pp. 40-44. ISSN 1410 - 9662</identifier><relation>http://eprints.undip.ac.id/2313/</relation><recordID>2313</recordID></dc>
|
| format |
Journal:Article Journal PeerReview:PeerReviewed PeerReview File:application/pdf File |
| author |
Sutanto, Heri |
| title |
PENGARUH VARIASI TEMPERATUR PENUMBUHAN TERHADAP KARAKTERISTIK
SIFAT LISTRIK FILM TIPIS GaN DI ATAS Si (111) DENGAN METODE PA-MOCVD |
| publisher |
Department of Physics, Universitas Diponegoro |
| publishDate |
2001 |
| topic |
QC Physics |
| url |
http://eprints.undip.ac.id/2313/1/Pengaruh_Variasi_Temperatur_Penumbuhan_Terhadap_Karakteristik_Sifat_Listrik_Film_Tipis_GaN_diatas_Si_(111)_Dengan_Metode_PA-MOCVD.pdf http://eprints.undip.ac.id/2313/ |
| contents |
The thin film of galium nitride has been grown on Si(111) substrates by plasma assisted metalorganic chemical vapor deposition in the range temperature 625 – 700 oC. We made ohmic contact by aluminium evaporation on thin film GaN. Electrical characterization of GaN thin film by
Hall efect measurement to measure carrier mobility, carrier concentration and resistivity. From the result Hall characterization that was found that Hall mobility, carrier concentration and resistivity are between 6,7 – 757,8 cm2/V.s, 4,6 x 1018 – 8,8 x 1019 cm-3 and 1,8 x 10-3 – 1,6 x 10-2 ohm cm. The highest Hall mobility is 757,8 cm2/V.s in growth temperature 675 oC. |
| id |
IOS2852.2313 |
| institution |
Universitas Diponegoro |
| institution_id |
69 |
| institution_type |
library:university library |
| library |
Perpustakaan Universitas Diponegoro |
| library_id |
485 |
| collection |
Diponegoro University Institutional Repository |
| repository_id |
2852 |
| city |
SEMARANG |
| province |
JAWA TENGAH |
| repoId |
IOS2852 |
| first_indexed |
2016-09-15T17:57:52Z |
| last_indexed |
2016-09-22T20:43:59Z |
| recordtype |
dc |
| _version_ |
1765880489554477056 |
| score |
17.13294 |