Frequency Limit of the Drift-Diffusion-Model for Semiconductor Simulations and its Transition to the Boltzmann Model
| Main Authors: | Till Ehrengruber, Arif Can Gungor, Kaja Jentner, Jasmin Smajic, Juerg Leuthold |
|---|---|
| Format: | Proceeding Journal |
| Bahasa: | eng |
| Terbitan: |
, 2020
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| Subjects: | |
| Online Access: |
https://zenodo.org/record/4309129 |
Daftar Isi:
- With ever increasing transfer speeds in electric communication systems, the operating frequencies of semiconductor devices reach the limit at which the underlying assumptions of the presently widely used Drift-Diffusion-Model (DDM) become invalid. For sufficiently high source frequency, the corresponding oscillation period becomes comparable to the (momentum) relaxation time. Consequently, the effect of the charge carriers’ inertia cannot be neglected anymore and more sophisticated models are required. In this work, the said effect is investigated by comparison of the DDM with the Hydrodynamic Model (HDM) and the solution of the highly non-linear set of partial differential equations by means of the Discontinuous Galerkin (DG) method is given. The results show that for frequencies above 100 GHz, modeling semiconductor devices by DDM leads to an overestimation of the current density, which also implies that for high frequency semiconductor simulations where Maxwell’s equations are coupled with semiconductor models (e.g. Scanning Microwave Microscopy (SMM), THz devices), employment of HDM is required for accurate results.
- citation for this abstract: T. Ehrengruber, A. C. Gungor, K. Jentner, J. Smajic, J. Leuthold, "Frequency Limit of the Drift-Diffusion-Model for Semiconductor Simulations and its Transition to the Boltzmann Model," 19th Biennial IEEE Conference on Electromagnetic Field Computation (CEFC), 2020.