Leakage Immune 9T-SRAM Cell in Sub-threshold Region
| Main Authors: | Gupta, Priya; Birla Institute of Technology and Science, Gupta, Anu; Birla Institute of Technology and Science, Asati, Abhijit; Birla Institute of Technology and Science |
|---|---|
| Format: | Article info application/pdf eJournal |
| Bahasa: | eng |
| Terbitan: |
Institute of Advanced Engineering and Science
, 2016
|
| Online Access: |
http://journal.portalgaruda.org/index.php/EEI/article/view/628 http://journal.portalgaruda.org/index.php/EEI/article/view/628/pdf |
Daftar Isi:
- The paper presents a variability-aware modified 9T SRAM cell. In comparison to 6T SRAM cell the proposed cell achieves 1.3× higher read-SNM and 1.77× higher write-SNM with 79.6% SINM (static current noise margin) distribution at the expense of 14.7× lower WTI (write trip current) at 0.4 V power supply voltage, while maintaining similar stability in hold mode. Thus, comparative analysis exhibits that the proposed design has a significant improvement, thereby achieving high cell stability at 45nm technology.