Performance analysis of ultrathin junctionless double gate vertical MOSFETs
| Main Authors: | E. Kaharudin, K.; Universiti Teknikal Malaysia Melaka (UTeM), A. F. M. Napiah, Z.; Universiti Teknikal Malaysia Melaka (UTeM), Salehuddin, F.; Universiti Teknikal Malaysia Melaka (UTeM), S. M. Zain, A.; Universiti Teknikal Malaysia Melaka (UTeM), F. Roslan, Ameer; Universiti Teknikal Malaysia Melaka (UTeM) |
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| Format: | Article info application/pdf eJournal |
| Bahasa: | eng |
| Terbitan: |
Institute of Advanced Engineering and Science
, 2019
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| Subjects: | |
| Online Access: |
http://journal.portalgaruda.org/index.php/EEI/article/view/1889 http://journal.portalgaruda.org/index.php/EEI/article/view/1889/1348 |
Daftar Isi:
- The main challenge in MOSFET minituarization is to form an ultra-shallow source/drain (S/D) junction with high doping concentration gradient, which requires an intricate S/D and channel engineering. Junctionless MOSFET configuration is an alternative solution for this issue as the junction and doping gradients is totally eliminated. A process simulation has been developed to investigate the impact of junctionless configuration on the double-gate vertical MOSFET. The result proves that the performance of junctionless double-gate vertical MOSFETs (JLDGVM) are superior to the conventional junctioned double-gate vertical MOSFETs (JDGVM). The results reveal that the drain current (ID) of the n-JLVDGM and p-JLVDGM could be tremendously enhanced by 57% and 60% respectively as the junctionless configuration was applied to the double-gate vertical MOSFET. In addition, junctionless devices also exhibit larger ION/IOFF ratio and smaller subthreshold slope compared to the junction devices, implying that the junctionless devices have better power consumption and faster switching capability.