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A Fortran program for calculating electron or hole mobility in disordered semiconductors from first-principles

Main Author: CPC, Mendeley
Other Authors: Li, Zi, Zhang, Xu, Lu, Gang
Format: Dataset
Terbitan: Mendeley , 2011
Subjects:
Surface Science
Condensed Matter Physics
Computational Physics
Online Access: https:/data.mendeley.com/datasets/tkmxw2n9fy
ctrlnum 0.17632-tkmxw2n9fy.1
fullrecord <?xml version="1.0"?> <dc><creator>CPC, Mendeley</creator><title>A Fortran program for calculating electron or hole mobility in disordered semiconductors from first-principles </title><publisher>Mendeley</publisher><description>Abstract A Fortran program is developed to calculate charge carrier (electron or hole) mobility in disordered semiconductors from first-principles. The method is based on non-adiabatic ab initio molecular dynamics and static master equation, treating dynamic and static disorder on the same footing. We have applied the method to calculate the hole mobility in disordered poly(3-hexylthiophene) conjugated polymers as a function of temperature and electric field and obtained excellent agreements with expe... Title of program: FPMu Catalogue Id: AEJV_v1_0 Nature of problem Determine carrier mobility from first-principles in disordered semiconductors as a function of temperature, electric field and carrier concentration. Versions of this program held in the CPC repository in Mendeley Data AEJV_v1_0; FPMu; 10.1016/j.cpc.2011.07.016 This program has been imported from the CPC Program Library held at Queen's University Belfast (1969-2018)</description><subject>Surface Science</subject><subject>Condensed Matter Physics</subject><subject>Computational Physics</subject><contributor>Li, Zi</contributor><contributor>Zhang, Xu</contributor><contributor>Lu, Gang</contributor><type>Other:Dataset</type><identifier>10.17632/tkmxw2n9fy.1</identifier><rights>Computer Physics Communications Journal Licence</rights><rights>https://www.elsevier.com/about/policies/open-access-licenses/elsevier-user-license/cpc-license/</rights><relation>https:/data.mendeley.com/datasets/tkmxw2n9fy</relation><date>2011-12-01T12:00:00Z</date><recordID>0.17632-tkmxw2n9fy.1</recordID></dc>
format Other:Dataset
Other
author CPC, Mendeley
author2 Li, Zi
Zhang, Xu
Lu, Gang
title A Fortran program for calculating electron or hole mobility in disordered semiconductors from first-principles
publisher Mendeley
publishDate 2011
topic Surface Science
Condensed Matter Physics
Computational Physics
url https:/data.mendeley.com/datasets/tkmxw2n9fy
contents Abstract A Fortran program is developed to calculate charge carrier (electron or hole) mobility in disordered semiconductors from first-principles. The method is based on non-adiabatic ab initio molecular dynamics and static master equation, treating dynamic and static disorder on the same footing. We have applied the method to calculate the hole mobility in disordered poly(3-hexylthiophene) conjugated polymers as a function of temperature and electric field and obtained excellent agreements with expe... Title of program: FPMu Catalogue Id: AEJV_v1_0 Nature of problem Determine carrier mobility from first-principles in disordered semiconductors as a function of temperature, electric field and carrier concentration. Versions of this program held in the CPC repository in Mendeley Data AEJV_v1_0; FPMu; 10.1016/j.cpc.2011.07.016 This program has been imported from the CPC Program Library held at Queen's University Belfast (1969-2018)
id IOS7969.0.17632-tkmxw2n9fy.1
institution Universitas Islam Indragiri
affiliation onesearch.perpusnas.go.id
institution_id 804
institution_type library:university
library
library Teknologi Pangan UNISI
library_id 2816
collection Artikel mulono
repository_id 7969
city INDRAGIRI HILIR
province RIAU
shared_to_ipusnas_str 1
repoId IOS7969
first_indexed 2020-04-08T08:12:35Z
last_indexed 2020-04-08T08:12:35Z
recordtype dc
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