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Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures

Tersimpan di:
Main Author: Dawson, Philip
Format: Dataset
Terbitan: Mendeley , 2017
Subjects:
Physics
Online Access: https:/data.mendeley.com/datasets/tdzkmm5gw3
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Lihat Juga

  • Ultrathin in as/GaAs quantum wells : electronic structure, excitonic effects and carrier capture
    oleh: BRUBACH, JORG
    Terbitan: (2001)
  • Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities
    oleh: Christian, George
    Terbitan: (2018)
  • Data associated with 'Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells: Insights from theory and experiment'
    oleh: Roble, abbas
    Terbitan: (2019)
  • PHOTOLUMINESCENCE OF MULTI LAYER GaSb/GaAs SELF-ASSEMBLED QUANTUM DOTS GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION AT ATMOSPHERIC PRESSURE
    oleh: Motlan, , et al.
    Terbitan: (2001)
  • PHOTOLUMINESCENCE OF GaSb SELF-ASSEMBLED QUANTUM DOT LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION
    oleh: Motlan, , et al.
    Terbitan: (2002)

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