Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

Main Author: Christian, George
Format: Dataset
Terbitan: Mendeley , 2018
Subjects:
Online Access: https:/data.mendeley.com/datasets/5c9b7283td
Daftar Isi:
  • Conduction and valence band profiles calculated using Nextnano3 for InGaN/GaN single quantum well structures with Si-doped InGaN underlayers and different GaN cap layer thicknesses. Photoluminescence spectra obtained at 10 K for those quantum well structures.