Electrical and optical properties of Ga-doped ZnO thin films deposited by DC magnetron sputtering
| Main Authors: | Nulhakim, Lukman, Rozana, Monna, Yuliarto, Brian, Makino, Hisao |
|---|---|
| Format: | Article info application/pdf Journal |
| Bahasa: | eng |
| Terbitan: |
Lembaga Penelitian, Pengabdian Masyarakat, dan Penjaminan Mutu (LPPM), Institut Teknologi Sumatera, Lampung Selatan, Lampung, Indonesia
, 2020
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| Online Access: |
https://journal.itera.ac.id/index.php/jsat/article/view/264 https://journal.itera.ac.id/index.php/jsat/article/view/264/103 |
Daftar Isi:
- The electrical and optical properties of Ga-doped ZnO (GZO) thin film prepared by direct current (dc) magnetron sputtering were investigated. The GZO thin film was deposited on a glass substrate at a substrate temperature (Ts) of room temperature (RT), 150 °C, and 200 °C using DC power of 100 W and an Ar gas flow rate of 450 sccm. The thickness of films was maintained at about 200 nm by controlling the deposition rate of about 12.5 nm/minute. The result showed that the electrical properties improved with increasing Ts. The films deposited at Ts of 200 °C showed the lowest resistivity, highest hall mobility, and carrier concentration compared to other Ts. The average transmittance of the films in the visible range (380-750 nm) was approximately 86.04%. The value of the optical band gap (Eg) was approximately 3.8 eV. The results suggested that GZO films deposited by DC magnetron sputtering at Ts of 200 °C can be applied to transparent conducting oxide (TCO) as an electrode in optoelectronic applications such as solar cells, LEDs and display technology.