Comparison of semiconductor laser at wavelength 980nm & 1480nm for edfa pumping scheme
| Main Author: | Pradana, Satyo |
|---|---|
| Format: | Thesis NonPeerReviewed Book |
| Bahasa: | ind |
| Terbitan: |
Fakultas Teknik UAI
, 2017
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| Subjects: | |
| Online Access: |
http://eprints.uai.ac.id/486/1/ http://eprints.uai.ac.id/486/ http://perpustakaan.uai.ac.id/index.php/cari/detailkoleksi/D7301020-6269-44ED-822E-1CA967F39173 |
Daftar Isi:
- Optical Communication are affected by many problem, loss of signal is one of them. Erbium Doped Fiber Amplifier (EDFA) is the key to solve it. By using Semiconductor Laser as pump for EDFA, can bring back the signal to normal condition. EDFA have a good wavelength operation at 980nm and 1480nm. To achieve selected wavelength, we must construct the Semiconductor Laser that suitable for 980nm and 1480nm. In that case, InGaAs and InGaAsP are the based material to construct the Semiconductor Laser. At wavelength 980nm the material that used is InGaAs and at wavelength 1480nm the material that used are InGaAs and InGaAsP. The reason material choose is suitable for selected wavelength. By using selected wavelength and material, the Semiconductor Laser can be produced properly. Also, determining the parameter is the important things to construct the Laser. By using Rate Equation, it can be obtained four result for Semiconductor Laser such as Injection Current vs Voltage, Carrier Density, Photon Density and Output Power vs Injection Current. By comparing output power of three Laser, InGaAs at 980nm has the largest output power and slope efficiency compared to InGaAs at 1480nm and InGaAsP at 1480nm. InGaAs at 1480nm is the most efficient Laser since have smallest threshold current compared to InGaAs at 1480nm and InGaAsP at 1480nm, even though have smallest output power.