Pentacene-Based Thin-Film Transistors With a Solution-Process Hafnium Oxide Insulator
| Main Authors: | Wei, Chia-Yu, Adriyanto, Feri, Lin, Yu-Ju, Li, Yu-Chang, Huang, Tong-Jyun, Chou, Dei-Wei, Wang, Yeong-Her |
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| Format: | Article PeerReviewed application/pdf |
| Terbitan: |
, 2009
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| Subjects: | |
| Online Access: |
http://eprints.uns.ac.id/947/1/196801161999031001Feri%2DInt_Journal_2.pdf http://eprints.uns.ac.id/947/ |
Daftar Isi:
- Abstract—Pentacene-based organic thin-film transistors with solution-process hafnium oxide (HfOx) as gate insulating layer have been demonstrated. The solution-process HfOx could not only exhibit a high-permittivity (κ = 11) dielectric constant but also has good dielectric strength. Moreover, the root-mean-square surface roughness and surface energy (γs) on the surface of the HfOx layer were 1.304 nm and 34.24 mJ/cm2, respectively. The smooth, as well as hydrophobic, surface of HfOx could facilitate the direct deposition of the pentacene film without an additional polymer treatment layer, leading to a high field-effect mobility of 3.8 cm2/(V · s). Index Terms—Hafnium oxide, high permittivity, organic thinfilm transistor (OTFT), solution process, surface energy.