High-Mobility Pentacene-Based Thin-Film Transistors With a Solution-Processed Barium Titanate Insulator
| Main Authors: | Wei, Chia-Yu, Kuo, Shu-Hao, Hung, Yu-Ming, Huang, Wen-Chieh, Adriyanto, Feri, Wang, Yeong-Her |
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| Format: | Article PeerReviewed application/pdf |
| Terbitan: |
, 2011
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| Subjects: | |
| Online Access: |
http://eprints.uns.ac.id/943/1/196801161999031001Feri%2DInt_Journal_1.pdf http://eprints.uns.ac.id/943/ |
Daftar Isi:
- Abstract—Pentacene-based organic thin-film transistors (OTFTs) with solution-processed barium titanate (Ba1.2Ti0.8O3) as a gate insulator are demonstrated. The electrical properties of pentacene-based TFTs show a high field-effect mobility of 8.85 cm2 · V−1 · s−1, a low threshold voltage of −1.89 V, and a low subthreshold slope swing of 310 mV/decade. The chemical composition and binding energy of solution-processed barium titanate thin films are analyzed through X-ray photoelectron spectroscopy. The matching surface energy on the surface of the barium titanate thin film is 43.12 mJ · m−2, which leads to Stranski–Krastanov mode growth, and thus, high mobility is exhibited in pentacene-based TFTs. Index Terms—Barium titanate, high field-effect mobility, high permittivity, organic thin-filmtransistor (OTFT), solution process.