InGaN Light-Emitting Diode with Quasi-Quantum-Dot-Shaped Active layer using SiCN interfacial layer

Main Author: Park, E.H
Format: Article
Terbitan: Institute Of Electrical and Electronics Engineers , 2007
Subjects:
Online Access: https://webpac.lib.itb.ac.id/search/detail/53488

Internet

https://webpac.lib.itb.ac.id/search/detail/53488

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