InGaN Light-Emitting Diode with Quasi-Quantum-Dot-Shaped Active layer using SiCN interfacial layer
| Main Author: | Park, E.H |
|---|---|
| Format: | Article |
| Terbitan: |
Institute Of Electrical and Electronics Engineers
, 2007
|
| Subjects: | |
| Online Access: |
https://webpac.lib.itb.ac.id/search/detail/53488 |
Daftar Isi:
- Hlm.24-35