PENUMBUHAN LAPISAN TIPIS NiCoFe/Si SEBAGAI MATERIAL PEMBUATAN SENSOR GIANT MAGNETORESISTANCE (GMR)
| Main Authors: | Djamal, Mitra; Theoretical High Energy Physics and Instrumentation Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jl. Ganesa 10, Bandung 40132, Yulkifli, Yulkifli; Instrumentation division, Department of Physics, Faculty of Mathematics and Natural Sciences, Padang State of University, Jl. Prof Dr. Hamka Airtawar Padang |
|---|---|
| Format: | Article \\\\\\\\\\\\\\\"application/pdf\\\\\\\\\\\\\\\" eJournal |
| Bahasa: | eng |
| Terbitan: |
Himpunan Fisika Indonesia
, 2013
|
| Online Access: |
http://jurnal.fisika-indonesia.org/index.php/JF/article/view/92 |
Daftar Isi:
- Pada paper ini akan dilaporkan optimasi waktu penumbuhan lapisan tipis (thin film) NiCoFe/Si sebagai material sensor berbasis Giant Magnetoresistance (GMR) menggunakan Reaktor dc-Opposed Target Magnetron Sputttering (OTMS). Material GMR mempunyai sifat-sifat magnetik dan elektrikyang sangat baik sehingga sangat berpotensi untuk dikembangkan menjadi devais pengindera (sensor)medan magnet generasi mendatang (next generation magnetic field sensing devices), seperti: sensor magnetik medan lemah, sensor arus, sensor posisi linier & rotasi, penyimpanan data (data storage), non-volatile magnetic random access memory (MRAM), heads recording dan spin valve transistor. Sifat magnetik dan listrik GMR selain ditentukan oleh jenis material yang digunakan juga sangatditentukan oleh ketebalan lapisan struktur penyusunnya. Dari hasil pengukuran sampel menggunakan Scanning Electron Microscope (SEM) untuk waktu deposisi selama 30, 60 dan 90 menit diperoleh ketebalan sampel berturut-turut adalah 0.30μm, 0.45μm dan 0.52μm.In this paper will be reported the optimum of the deposition rate of thin film NiCoFe/Si as a sensor material based on Giant Magnetoresistance. GMR materials have high potential as the nextgeneration magnetic field sensing devices. It has such high magnetic and electric properties that have high potential to be developed as sensors, such as: low magnetic field sensor, current measurement,linier and rotation position sensor, data storage, non-volatile magnetic random access memory (MRAM), heads recording, spin valve transistor. The magnetic and electric properties of GMR are notonly depend on the type of the materials but also on the layer thickness of the material’s structure. The measurement results using Scanning Electron Microscope (SEM) for deposition time of 30, 60 and 90 minutes give the thickness of 0.30μm, 0.45μm and 0.52μm respectively.