Effects of Process Variations in a HCMOS IC using a Monte Carlo SPICE Simulation
| Main Authors: | Widianto, Widianto, Syafaah, Lailis, Nurhadi, Nurhadi |
|---|---|
| Format: | Article PeerReviewed Book |
| Bahasa: | eng |
| Terbitan: |
Program Studi Elektro dan Informatika Fakultas Teknik Universitas Muhammadiyah Malang
, 2018
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| Subjects: | |
| Online Access: |
http://eprints.umm.ac.id/59701/1/Widianto%20Syafaah%20Nurhadi%20-%20Process%20Variations%20High-Speed%20Complementary%20Metal%20Oxide%20Semiconductor%20Integrated%20Circuit%20Monte%20Carlo%20Normal%20Distribution.pdf http://eprints.umm.ac.id/59701/19/Peer%20Review-Widianto-Process%20Variations%20High-Speed%20Complementary%20Metal%20Oxide%20Semiconductor%20Integrated%20Circuit%20Monte%20Carlo%20Normal%20Distribution.pdf http://eprints.umm.ac.id/59701/20/Similarity-Widianto-%20Process%20Variations%20High-Speed%20Complementary%20Metal%20Oxide%20Semiconductor%20Integrated%20Circuit%20Monte%20Carlo%20Normal%20Distribution.pdf http://eprints.umm.ac.id/59701/ https://kinetik.umm.ac.id/index.php/kinetik/article/view/437 |
Daftar Isi:
- In this paper, the effects of process variations in a HCMOS (High-Speed Complementary Metal Oxide Semiconductor) IC (Integrated Circuit) are examined using a Monte Carlo SPICE (Simulation Program with Integrated Circuit Emphasis) simulation. The variations of the IC are L and VTO variations. An evaluation method is used to evaluate the effects of the variations by modeling it using a normal (Gaussian) distribution. The simulation results show that the IC may be detected as a defective IC caused by the variations based on large supply currents flow to it.