PREPARATION AND PHOTOLUMINESCENCE PROPERTIES OF RF-SPUTTERED ZnO FILMS
| Main Authors: | Lieu, N. T. T., Canh, T. D., Nghia, N. X., Tarigan, K., Phan, T. L. |
|---|---|
| Format: | Article info application/pdf Journal |
| Bahasa: | eng |
| Terbitan: |
Mercu Buana University
, 2015
|
| Online Access: |
http://umb-intl-journal.com/index.php/ijimeam/article/view/8 http://umb-intl-journal.com/index.php/ijimeam/article/view/8/30 |
Daftar Isi:
- ZnO/Si films were prepared by radio frequency (RF) magnetron sputtering at room temperature. By optimizing the heat treatment conditions, we obtained a good quality film annealed at 700 oC for longer 60 minutes. This process was monitored carefully by Raman scattering spectroscopy, and X-ray diffraction. The photoluminescence study on this film revealed that only ultraviolet emissions due to donor-acceptor pair (DAP), neutral acceptor-bound exciton (AoX) and donor-bound exciton (DoX) were observed. The intensity and peak position of these emissions depend on the measurement temperature and excitation power density.