Daftar Isi: Studi Pengaruh Konsentrasi Co pada Struktur Kristal dan Respon Photoluminescence Film Tipis Ti1-xCoxO2 yang Ditumbuhkan dengan Teknik MOCVD

Main Authors:	Saragih, Horasdia; 1) Laboratorium Fisika Material Elektronik, Departemen Fisika, Institut Teknologi Bandung Jl. Ganesa 10 Bandung, Indonesia 40132 Telp./Fax: (022) 2511848 2) Jurusan Fisika, FMIPA Universitas Pattimura, Ambon, Indonesia, Arifin, Pepen; 1) Laboratorium Fisika Material Elektronik, Departemen Fisika, Institut Teknologi Bandung Jl. Ganesa 10 Bandung, Indonesia 40132 Telp./Fax: (022) 2511848, Barmawi, Mohamad; 1) Laboratorium Fisika Material Elektronik, Departemen Fisika, Institut Teknologi Bandung Jl. Ganesa 10 Bandung, Indonesia 40132 Telp./Fax: (022) 2511848
Format:	Article info application/pdf eJournal
Bahasa:	eng
Terbitan:	ITB Journal Publisher, LPPM ITB , 2013
Subjects:	Photoluminescence Thin Films Ti1-xCoxO2 MOCVD
Online Access:	http://journals.itb.ac.id/index.php/jmfs/article/view/286 http://journals.itb.ac.id/index.php/jmfs/article/view/286/269

Daftar Isi:

Ti1-xCoxO2 thin films have been deposited on Si substrate by MOCVD technique. Thin films were synthesized by a single plane orientation structure of anatase-213 at various to Co concentartions up to 5,77%. Photoluminescence emission spectra of thin films showed a maximum peak at the energy of 2.8 eV. These energies did not change when increasing Co concentration in the Ti1-xCoxO2 thin films up to 5.77%. The patterns of spectrum emission only differ on the intensity and broadness of spectra. Broading occurs towards the higher energy of 2.8 eV, while the intensities were increased with increasing of Co concentration.