THE EFFECT OF TARGET NITRIDATION ON STRUCTURAL PROPERTIES OF InN GROWN BY RADIO-FREQUENCY REACTIVE SPUTTERING
| Main Authors: | Motlan, , Goldys, E.M., Tansley, T.L. |
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| Format: | Article PeerReviewed |
| Terbitan: |
ScienceDirect
, 2002
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| Subjects: | |
| Online Access: |
http://digilib.unimed.ac.id/35826/ https://doi.org/10.1016/S0040-6090(02)00772-1 |
Daftar Isi:
- The structure and composition of indium nitride (InN) films grown by radio frequency reactive sputtering as a function of target nitridation have been investigated. X-ray diffraction shows that the films are primarily polycrystalline with preferred (0 0 2) orientation indicating the c-axis of the hexagonal InN structure perpendicular to the substrate. Scanning electron microscopy shows that films grown from non-nitrided targets are characterised by smaller grain size and rougher surfaces, with no observable structure. Films grown with pre-nitrided targets have a continuous columnar morphology with relatively even surfaces. X-ray photoelectron spectroscopy and Rutherford backscattering techniques were used to quantify the amounts of In, N and O contents.