MULTILAYER GaSb/GaAs SELF-ASSEMBLED QUANTUM DOTS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION
| Main Authors: | Motlan, , Butcher, K.S.A., Goldys, E.M., Tansley, T.L. |
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| Format: | Article PeerReviewed |
| Terbitan: |
ScienceDirect
, 2003
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| Subjects: | |
| Online Access: |
http://digilib.unimed.ac.id/35824/ https://doi.org/10.1016/S0254-0584(03)00163-9 |
Daftar Isi:
- A mutilayer structure of self-assembled GaSb/GaAs quantum dots (QDs) has been grown for the first time by metalorganic chemical vapor deposition (MOCVD) in the Stranski–Krastanow (S–K) growth mode. Evidence of the growth of the self-assembled quantum dots was provided using transmission electron microscopy. This study shows that the GaSb/GaAs heterostructure is well controlled and there is no sign of the intermixing that often occurs for this system. The existence of the quantum dots and of a wetting layer was also supported by photoluminescence spectra. These results open the way to the realization of GaSb/GaAs QD superlattice structures in which the islands have equal size in all layers. The QD structures also provide an opportunity for studying electronic coupling between islands.