GROWTH-TEMPERATURE-DEPENDENT CATHODOLUMINESCENCE PROPERTIES OF GaSb/GaAs QUANTUM-DOT MULTILAYER STRUCTURES
| Main Authors: | Drozdowicz-Tomsia, K., Goldys, E.M., Motlan, , Zareie, Hadi, Philips, M.R. |
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| Format: | Article PeerReviewed |
| Terbitan: |
American Institute of Physics (AIP) Publishing
, 2005
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| Subjects: | |
| Online Access: |
http://digilib.unimed.ac.id/35822/ https://doi.org/10.1063/1.1920418 |
Daftar Isi:
- Multilayer GaSb/GaAs quantum-dot (QD) structures grown by atmospheric-pressure metalorganic chemical vapor deposition on semi-insulating GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescence (CL). Two main features assigned to wetting layer and QDs are observed in the CL spectra. Their relative positions strongly depend on the growth conditions of the confinement layers. The highest separation of 270 meV is achieved for GaAs confinement layers grown at 540 °C. This work was supported by the Australian Research Council DP0343541 grant. One of the authors (K. D-T.) would like to thank Katie McBean for assistance in CL measurements.