Analytical current Model for Dual Material Double Gate Junctionless Transistor
| Main Authors: | wagaj, santosh chandrakant; Savitribai Phule Pune University, Pune, patil, shailaja chandrakant; savitribai phule pune university, pune |
|---|---|
| Other Authors: | Dual Material Gate, Bulk Current, Junctionless, Silicon on Insulator, Semiconductor device modeling |
| Format: | Article info application/pdf eJournal |
| Bahasa: | eng |
| Terbitan: |
IAES Indonesian Section
, 2019
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| Online Access: |
http://section.iaesonline.com/index.php/IJEEI/article/view/581 http://section.iaesonline.com/index.php/IJEEI/article/view/581/453 |
Daftar Isi:
- A Transistor model with bulk current is proposed in this article for long channel dual material double gate junction less transistor. The influence of different device parameters such as body thickness, channel length, oxide thickness, and the doping density on bulk current is investigated. The proposed model is validated and compared with simulated data using Cogenda TCAD. The model is designed by Poison’s equation and depletion approximation. Current driving capability of MOSFET is improved by dual material gate compare to single material gate.