THE GaN BUFFER LAYER THICKNESS INFLUENCE ON CRYSTAL STRUCTURE AND OPTICAL PROPERTIES OF GaN THIN FILMS GROWN BY PULSED LASER DEPOSITION (PLD) METHOD
| Main Authors: | Adnyana, I. G.A.P.; Departemen Fisika, FMIPA-Universitas Udayana Kampus Bukit Jimbaran, Buleleng, Denpasar, Bali, Suarbawa, Komang Ngurah; Departemen Fisika, FMIPA-Universitas Udayana Kampus Bukit Jimbaran, Buleleng, Denpasar, Bali, Sukarasa, I. Ketut; Departemen Fisika, FMIPA-Universitas Udayana Kampus Bukit Jimbaran, Buleleng, Denpasar, Bali |
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| Other Authors: | UNUD - Universitas Udayana |
| Format: | Article application/pdf eJournal |
| Bahasa: | ind |
| Terbitan: |
BATAN
, 2013
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| Online Access: |
http://jurnal.batan.go.id/index.php/jsmi/article/view/1085 |
Daftar Isi:
- The influence of the GaN buffer layer thickness on GaN thin films which was grown by pulsed laser deposition (PLD) technique have been studied. The GaN buffer layer it self was deposited at temperature of 450 oC and nitrogen flow rate of 100 sccm. The buffer layer deposition time was varied from 15 to 45 minutes. The GaN thin films obtained were characterized using Profilometer DEKTAK IIA, X-ray Diffractometer and UV-Vis Spectroscopy. It was found out that the crystal quality and optical properties greatly depend on GaN buffer layer thickness. From X-ray diffraction and UV-Vis Spectroscopy analysis, it was shown that the GaN thin films grown on buffer layer with thickness of 184.6 Å tend to have a better single orientation of (0002) with FWHM 0.9o and band gap energy Eg = 3.4 eV than GaN thin films grown on buffer layer with 370.2Å and 560Å thicknesses.Keywords: Gallium Nitride, PLD, Buffer layer, Crystal structure, Optical properties.