CRYSTAL STRUCTURE ANALYSIS OF LaMnO3 WITH X-RAY DIFFRACTION TECHNIQUE USING THE RIETVELD METHOD
| Main Authors: | Sukirman, Engkir; Pusat Teknologi Bahan Industri Nuklir (PTBIN)-BATAN Kawasan Puspiptek, Serpong 15314, Adi, Wisnu Ari; Pusat Teknologi Bahan Industri Nuklir (PTBIN)-BATAN Kawasan Puspiptek, Serpong 15314, Purwamargapratala, Yustinus; Pusat Teknologi Bahan Industri Nuklir (PTBIN)-BATAN Kawasan Puspiptek, Serpong 15314 |
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| Other Authors: | BATAN |
| Format: | Article application/pdf eJournal |
| Bahasa: | ind |
| Terbitan: |
BATAN
, 2013
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| Online Access: |
http://jurnal.batan.go.id/index.php/jsmi/article/view/1026 |
Daftar Isi:
- Crystal structure analysis of LaMnO3 using the Rietveld metohod has been carried out. The LaMnO3 sample was synthesized with high energy mechanical milling from the raw materials of La2O3 and MnO2 with the appropriate mol ratio. Milling were performed for 10 hours, peletisized and hereinafter sintered at 1350 °C for 6 hours. The sample characterizations covered the crystal structure and electric-magnetic properties of the materials by X-ray diffraction technique using the Rietveld method and the four point probe, respectively. The Rietveld refinement results based on the X-rays diffraction data indicate that the sample of LaMnO3 is single phase with the crystal system: orthorhombic, the space group: Pnma No. 62 and the lattice parameters: a = 55.4405(9) Å; b = 7.717(1) Å dan c = 5.537(1) Å. The material owns Magnetic Resonance (MR) respond of 7%, the mean value of crystallite size, D = 17 nm and lattice strain, e = - 0.5%. So, the material go through a compressive strain, and according to the Nanda’s strain model, it becomes a type G antiferromagnetic insulator. Because the insulator properties of the material does not change although being hit by the external magnetic field, hence the MR respon is only caused by the order of electron spin. Therefore at room temperature, LaMnO3.0 just exhibits a small MR respon.Keywords: Crystal structure, LaMnO3, X-Ray Diffraction, Rietveld methode.