(2010). Analisis rancangan vertical overflow drain (VOD) pada buried charge coupled device (BCCD) untuk menekan blooming dengan variasi konsentrasi impurity dan tebal p-well = Design analysis of vertical overflow drain (VOD) in buried charge coupled device (BCCD) to suppress blooming with impurity concentration and p-well width variations. Fakultas Teknik Universitas Indonesia.
Chicago Style CitationAnalisis Rancangan Vertical Overflow Drain (VOD) Pada Buried Charge Coupled Device (BCCD) Untuk Menekan Blooming Dengan Variasi Konsentrasi Impurity Dan Tebal P-well = Design Analysis of Vertical Overflow Drain (VOD) in Buried Charge Coupled Device (BCCD) to Suppress Blooming With Impurity Concentration and P-well Width Variations. Fakultas Teknik Universitas Indonesia, 2010.
MLA CitationAnalisis Rancangan Vertical Overflow Drain (VOD) Pada Buried Charge Coupled Device (BCCD) Untuk Menekan Blooming Dengan Variasi Konsentrasi Impurity Dan Tebal P-well = Design Analysis of Vertical Overflow Drain (VOD) in Buried Charge Coupled Device (BCCD) to Suppress Blooming With Impurity Concentration and P-well Width Variations. Fakultas Teknik Universitas Indonesia, 2010.