Commonality of Kinetics and Mechanisms of Galvanostatic Anodic Oxidation of Silicon, Carbide, and Silicon Nitride
| Main Author: | Mileshko, L.P. |
|---|---|
| Format: | Article eJournal |
| Bahasa: | rus |
| Terbitan: |
, 2019
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| Subjects: | |
| Online Access: |
https://zenodo.org/record/2629542 |
Daftar Isi:
- It is shown that in the galvanostatic mode of electrolytic anodizing of Si, SiC, and Si3N4 the formation of their anodic oxides proceeds with the activation control of the process. It is suggested that the limiting stage of the oxidation process of these materials is the anodic reaction of the formation of intermediate monoxide SiO.