OPTIMIZATION OF DOPANT DIFFUSION AND ION IMPLANTATION TO INCREASE INTEGRATION RATE OF FIELD-EFFECT HETEROTRANSISTORS. AN AP PROACH TO SIMPLIFY CONSTRUCTION OF THE HETEROTRANSISTORS
| Main Author: | E.L. Pankratov, E.A. Bulaeva |
|---|---|
| Format: | Article eJournal |
| Terbitan: |
, 2015
|
| Online Access: |
https://zenodo.org/record/1226800 |
Daftar Isi:
- In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach based on manufacturing field-effect transistors in heterostructures and optimization of technological processes. At the same time we consider possibility to simplify their constructions.