Recombination Analysis of Phosphorus-Doped Nanostructured Silicon Oxide Passivating Electron Contacts for Silicon Solar Cells
| Main Authors: | Stuckelberger, Josua, Nogay, Gizem, Wyss, Philippe, Ingenito, Andrea, Allebé, Christophe, Horzel, Jörg, Kamino, Brett A., Despeisse, Matthieu, Haug, Franz-Josef, Löper, Philipp, Ballif, Christophe |
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| Format: | Article eJournal |
| Terbitan: |
, 2018
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| Subjects: | |
| Online Access: |
https://zenodo.org/record/1165670 |
Daftar Isi:
- We analyze the recombination properties of passivating electron selective contacts based on nanostructured silicon oxide. Our contact design is based on an interfacial buffer oxide capped with a bilayer structure of phosphorus-doped silicon oxide and silicon which is annealed at 900 °C. We investigate in detail the effects of the initial dopant concentration in the bilayer and of the anneal dwell time on dopant in-diffusion, contact formation, and interface recombination. Our investigation addresses also the hydrogenation of interface defects and the effect of indium-tin- oxide (ITO) sputtering, allowing us to separate the interplay between enhanced field-effect passivation,Auger recombination, and interface recombination. After thermal annealing, the passivating electron selective contact presented here attains a saturation current density (J0 ) of 12.4 fA cm−2 for medium doping, which improves further upon hydrogenation to J0 = 8.1 fA cm−2.For specific contact resistances < 500 mΩcm2, however, higher doping concentrations are required. For those doping concentrations, the saturation current density is 13.9 fA cm−2 and increases by 10% upon sputter-deposition of an ITO layer on top of the electron selective stack.
- copyright IEEE 2018