Optimasi Parameter Tekanan Deposisi pada Penumbuhan Lapisan Tipis Polykristal Silikon dengan Metode Hot Wire Cell PECVD
| Main Authors: | Amiruddin Supu; Prodi Fisika, Jurusan PMIPA, FKIP, Universitas Nusa Cendana, Kupang, Ida Usman; Jurusan Fisika, FPMIPA, Universitas Haluoleo, Kendari, Mursal Mursal; Jurusan Fisika, FPMIPA, Universitas Syiah Kuala, Aceh, Toto Winata; Lab. Fisika Material Elektronik, Jurusan Fisika FMIPA - ITB, Sukirno Sukirno; Lab. Fisika Material Elektronik, Jurusan Fisika FMIPA - ITB |
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| Format: | Article application/pdf eJournal |
| Bahasa: | eng |
| Terbitan: |
Institut Teknologi Bandung
, 2009
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| Subjects: | |
| Online Access: |
http://journal.fmipa.itb.ac.id/jms/article/view/86 |
Daftar Isi:
- The Hot wire Cell PECVD method has been developed to grow the poly-Si thin films. The poly-Si thin films were grown on the 7059 corning glass at a filament temperature of 1800 oC. Silane (SiH4) gas 10% diluted in hydrogen (H2) gas was used as gas source. In the hot wire cell PECVD method, reactant gases were decomposed as a result of reaction with a heated filament placed above the substrate and paralel to the gas inlet. The characterization results exhibited that the poly-Si thin films could be grown at the pressure of 200 to 500 mTorr with a substrate temperature of 275 oC. The analysis of XRD result showed that preferential intensity was obtained at the crystal orientation of . The highest values of peak intensity (111 cps), grains size (minor axis 0.5 μm) and dark conductivity (0.60x10-5 Scm-1) were obtained at the deposition pressure of 300 mTorr with deposition rate of 2.2 nm/s.