Pengaruh Oksidasi Setelah Deposisi Terhadap Sifat Film Tipis ZnO:Ga
| Main Authors: | Faizal, Reza, Marwoto, Putut, Sulhadi, Sulhadi, Sugianto, Sugianto |
|---|---|
| Format: | Article info application/pdf eJournal |
| Bahasa: | eng |
| Terbitan: |
Institut Teknologi Bandung
, 2017
|
| Online Access: |
https://journal.fmipa.itb.ac.id/index.php/jms/article/view/736 https://journal.fmipa.itb.ac.id/index.php/jms/article/view/736/485 |
Daftar Isi:
- Pengaruh oksidasi setelah deposisi terhadap sifat film tipis ZnO:Ga telah dipelajari. Film dideposisi menggunakan metode dc magnetron sputtering pada suhu 300oC selama 1 jam, kemudian dilakukan variasi oksidasi menggunakan gas oksigen purity 99,99% dengan tekanan 0 mTorr dan 50 mTorr pada suhu 300oC selama 20 menit. Berdasarkan hasil SEM, ukuran butir film menunjukkan perubahan menjadi lebih besar pada tekanan oksigen 50 mTorr dibandingkan pada tekanan oksigen 0 mTorr. UV-Vis spektrofotometer menunjukkan transmitansi film pada cahaya tampak meningkat seiring dengan meningkatnya tekanan oksigen mencapai sekitar ~83%. Celah pita energi yang dihasilkan film tipis ZnO:Ga pada tekanan oksigen 0 mTorr dan 50 mTorr masing-masing 3,32 eV dan 3,4 eV.
- The effect of after-deposition oxidation to the thin film properties Ga doped ZnO has been studied. Film deposited using dc magnetron sputtering method at temperature 300oC for one hour and then it was performed variations of oxidation using oxygen gas (99,9%) with pressure of 0 mTorr and 50 mTorr at a temperature of 300 ° C for 20 minutes. According to the image scanning of electron microscopy, it shows that the film grain size became larger in oxygen pressure of 50 mTor as compared to the pressure of 0 mTor. UV-Vis spectrophotometer analysis showed the film transmittance in visible light increases with the increasing of oxygen pressure reached ~83%. Band-gap energy that has been produced by film on the oxygen pressure of 0 mTorr and 50 mTorr are respectively 3.32 eV and 3.4 eV.