Studi Pengaruh Rasio V/III terhadap Morfologi Permukaan Film Tipis GaSb yang
| Main Authors: | Lilik Hasanah; Jurusan Fisika, FPMIPA UPI Bandung, Euis Sustini; Program Studi Fisika Fakultas Matematika dan Ilmu Pengetahuan Alam ITB, Sukirno Sukirno; Program Studi Fisika Fakultas Matematika dan Ilmu Pengetahuan Alam ITB, Maman Budiman; Program Studi Fisika Fakultas Matematika dan Ilmu Pengetahuan Alam ITB |
|---|---|
| Format: | Article application/pdf eJournal |
| Bahasa: | eng |
| Terbitan: |
Institut Teknologi Bandung
, 2009
|
| Subjects: | |
| Online Access: |
http://journal.fmipa.itb.ac.id/jms/article/view/184 |
Daftar Isi:
- Gallium Antimony (GaSb) thin film were grown on Semi Insulating (SI) GaAs (100) substrate by MOCVD (Metal-Organic Chemical Vapor Deposition) method. TMGa (trimethylgallium) and TDMASb (tridismethylaminoantimony) were used as precursors of group III and V, respectively, with H2 as gas carrier. The films were grown with V/III varied between 1,15 and 3,1. V/III ratio dependent of surface morphplogy and atomic composition of GaSb thin films were studied. The best surface morphology stoichiometric GaSb obtained at the V/II ratio of 2.0.