Penumbuhan Lapisan Tipis μc-Si:H dengan Sistem Hot Wire PECVD untuk Aplikasi Divais Sel Surya
| Main Authors: | Syamsu Syamsu; Program Studi Fisika, Universitas Tadulako, Palu, Darsikin Darsikin; Program Studi Fisika, Universitas Tadulako, Palu, Iqbal Iqbal; Program Studi Fisika, Universitas Tadulako, Palu, Jusman Jusman; Program Studi Fisika, Universitas Tadulako, Palu, Toto Winata; Lab. Fisika Material Elektronik, Jurusan Fisika FMIPA - ITB, Sukirno Sukirno; Lab. Fisika Material Elektronik, Jurusan Fisika FMIPA - ITB, Mohamad Barmawi; Lab. Fisika Material Elektronik, Jurusan Fisika FMIPA - ITB |
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| Format: | Article application/pdf eJournal |
| Bahasa: | eng |
| Terbitan: |
Institut Teknologi Bandung
, 2009
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| Subjects: | |
| Online Access: |
http://journal.fmipa.itb.ac.id/jms/article/view/102 |
Daftar Isi:
- Microcrystalline hydrogenated silicon thin films have been grown on corning 7059 by using Hot Wire Plasma Enhanced Chemical Vapor Deposition (PECVD) system. Silane gas dilute in hydrogen gas (SiH4: H2 = 1 : 10 ) used as gas source. The effect substrate temperatures on deposition rate, optical, electrical and structural properties were analyzed. The deposition rate was varied from 3.22-5.24 μm/hour at temperature 175-275o C, SiH4 flow rate of 70 sccm, and filament temperature ~ 1000oC. The optical band gap varied from 1.13-1.44 eV at substrate temperature of 175-275. The Result XRD characterization of μc-Si: H thin film was grown at 275o C shows , , and orientation. Dark conductivities vary from 10-6-10-4 S/cm The Dark conductivity of μc-Si: H is higher than a-Si: H thin film. This result shows that μc-Si: H thin film is possible for p-i-n solar cells device application.