Electrical and optical simulation of nPERT solar cells with epitaxially grown emitters
| Main Authors: | Filipič, Miha, Recaman Payo, Maria, Bearda, Twan, Depauw, Valerie, Sivaramakrishnan Radhakrishnan, Hariharsudan, Van Nieuwenhuysen, Kris, Kuzma Filipek, Izabela, Duerinckx, Filip, Debucquoy, Maarten, Gordon, Ivan, Szlufcik, Jozef, Poortmans, Jef |
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| Format: | Article Journal |
| Bahasa: | eng |
| Terbitan: |
, 2017
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| Subjects: | |
| Online Access: |
https://zenodo.org/record/844362 |
Daftar Isi:
- One of the advantages of an epitaxially grown emitter is that its doping profile is not limited by the diffusion process and that almost any arbitrary profile shape can be realized. In this simulation study we make use of the epitaxial doping profile’s flexibility to optimize the emitter of an nPERT solar cell. Initially an optical and electrical model is set up in Sentaurus TCAD and calibrated based on measurements of an actual device with an efficiency of 22.5%. Next, simulations for a box shaped profile with varying thicknesses and doping concentrations are carried out. Additionally, a two-step emitter consisting of a combination of two box profiles – one located at the surface and another deep profile underneath the former one – is also simulated. The results clearly identify the optimal doping concentrations and thicknesses which result in the highest efficiencies. Outside of these optimal regions the most significant loss mechanisms are pointed out. By switching from an optimal single profile emitter to an optimal two-step profile emitter an efficiency gain of 0.4% absolute can be realized, demonstrating that the shape of the doping profile can play an important role in increasing the solar cell efficiency.
- Marie Sklodowska-Curie Action; Epitaxial silicon foil solar cells with interdigitated back contacts 657270 — EpiSil-IBC