Characteristics of a Junctionless Nanowire Transistor
Main Author: | George Angelov |
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Format: | info Proceeding Journal |
Bahasa: | eng |
Terbitan: |
, 2021
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Subjects: | |
Online Access: |
https://zenodo.org/record/5538091 |
Daftar Isi:
- Channel length influence on the nanowire parameters and characteristics at different gate voltages for applications in junctionless transistors (JLTs) are analyzed. The density-gradient effective mass tensor of the charge carriers is studied. The results obtained are used to indicate a compromise between performance and minimum dimensions for JLT sensor applications. We also demonstrated technology modeling of the devices in two commercial simulators: COMSOL and Sentaurus. Both produced comparable results at comparable device parameters.