High graphene permeability for room temperature silicon deposition: The role of defects
| Main Authors: | F. Ronci, S. Colonna, R. Flammini, M. De Crescenzi, M. Scarselli, M. Salvato, I. Berbezier, F. Jardali, C. Lechner, P. Pochet, H. Vach, P. Castrucci |
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| Format: | Article Journal |
| Bahasa: | eng |
| Terbitan: |
, 2019
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| Subjects: | |
| Online Access: |
https://zenodo.org/record/5534478 |
Daftar Isi:
- Silicon deposition at room temperature on a graphene monolayer epitaxially grown on a Ni(111) substrate studied experimentally with STM showed a significant permeability of the graphene layer that allows Silicon Theoretical calculations show that the high impermeability of graphene is, indeed, considerably lowered by the presence of defects on the Gr layer, allowing the intercalation of deposited Si atoms even at room temperature and leading to the formation of two-dimensional intercalated and disordered Si islands interacting with the Ni substrate at room temperature.