Compact Modeling for the Drain Current of an Extrinsic Organic Field-Effect Transistor Based on an Improved Smoothing Function
| Main Author: | Valentin Turin |
|---|---|
| Format: | info Proceeding Journal |
| Terbitan: |
, 2021
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| Subjects: | |
| Online Access: |
https://zenodo.org/record/5532422 |
Daftar Isi:
- Previously we proposed a new smoothing function to bridge the transition between the linear regime and the saturation regime, for the intrinsic (neglecting the contact resistances) MOSFET. In contrast to the traditional smoothing function, this approach gives a monotonic decrease of the differential conductance from the maximum value in the linear regime to the minimum value in the saturation regime. We also proposed a linear approximation for an extrinsic (accounting for the source and drain resistances) MOSFET drain current dependence on the drain bias in the saturation regime. Finally, by using this approximation and the new smoothing function we developed an extrinsic MOSFET above the threshold drain current compact model. We now use a similar approach for the extrinsic organic field-effect transistor (OFET) compact modeling. First, we proposed an approximate equation for the extrinsic OFET saturation current. Now we present an extrinsic compact model for the above threshold drain current of an OFET based on a new smoothing function, on a new approximate equation for the saturation current and on a new linear approximation for a drain current in the saturation regime. This model takes into account the source and drain resistances and provides a monotonic decrease in the differential conductance with the drain bias rise.