ZnSe-BASED SOLAR-BLIND ULTRAVIOLET PHOTODETECTORS WITH DIFFERENT SCHOTTKY CONTACT METALS
| Main Authors: | Vadim P. SIRKELI, Natalia D. NEDEOGLO, Dmitrii D. NEDEOGLO, Oktay YILMAZOGLU, Ahid S. HAJO, Sascha PREU, Franko KÜPPERS, Hans L. HARTNAGEL |
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| Format: | Article Journal |
| Bahasa: | eng |
| Terbitan: |
, 2021
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| Subjects: | |
| Online Access: |
https://zenodo.org/record/5094718 |
Daftar Isi:
- We report on the selection of contact metallisations for ZnSe-based metal-semiconductor-metal ultraviolet photodetectors. Our evaluation is based on Ni/Au, Cr/Au, and hybrid Ag-nanowire contacts. Low values of dark current of 0.32 nA, 0.82 nA and 1.64 nA at bias voltage of 15 V were achieved for photodetectors with Ag-NW, Ni/Au and Cr/Au interdigital contacts, respectively. The best performance of our ZnSe-based ultraviolet photodetectors is observed for Ni/Au interdigital contacts. This is due to the higher Schottky barrier height, which is equal to ~ 1.49 eV for Ni/Au contacts in comparison with ~ 1.26 eV for Cr/Au contacts. A very high responsivity of 5.40 AW-1 at bias voltage of 15 V for light with a wavelength of 325 nm is obtained for devices with Ni/Au interdigital contacts. Moreover, the maximum of photocurrent on/off ratio of 20342 and minimum of NEP of ~ 3 × 10-15 W Hz-1/2 at bias voltage of 15 V was achieved for this type of device.