Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling
| Main Authors: | Firas Natheer Abdul-Kadir, Yasir Hashim, Mohammed Nazmus Shakib, Faris Hassan Taha |
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| Format: | Article Journal |
| Terbitan: |
, 2021
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| Subjects: | |
| Online Access: |
https://zenodo.org/record/4638337 |
Daftar Isi:
- This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (V T ). These parameters are critical factors of the characteristics of tunnel field effect transistors. The Silvaco TCAD has been used to study the electrical characteristics of Si-NW TFET. Output (gate voltage-drain current) characteristics with channel dimensions were simulated. Results show that 50nm long nanowires with 9nm-18nm diameter and 3nm oxide thickness tend to have the best nanowire tunnel field effect transistor (Si-NW TFET) characteristics.