Development of Accurate BSIM4 Noise Parameters for CMOS 0.13-μm Transistors in Below 3-GHz LNA Application
| Main Authors: | Asmaa Nur Aqilah Zainal Badri, Norlaili Mohd Noh, Shukri bin Korakkottil Kunhi Mohd, Asrulnizam Abd Manaf, Arjuna Marzuki, Mohd Tafir Mustaffa, Mohamed Fauzi Packeer Mohamed |
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| Format: | Article Journal |
| Terbitan: |
, 2018
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| Subjects: | |
| Online Access: |
https://zenodo.org/record/4287880 |
Daftar Isi:
- Accurate transistor thermal noise model is crucial in IC design as it allows accurate selection of transistors for specific frequency application. The accuracy of the model is represented by the similarity between the simulated and the measured noise parameters (NPs). This work was based on a problem faced by a foundry concerning the dissimilarities between the measured and simulated NPs, especially minimum noise figure (NFmin) for frequencies below 3 GHz. Hence, this work looks into the BSIM4 charge-based (TNOIMOD 0) and holistic (TNOIMOD 1) thermal noise models of a 0.13- μm CMOS device to determine the most accurate settings between them. As such, both the simulated and measured data for the transistors were retrieved from four NPs; NFmin, noise resistance (RN), |Гopt| and Гopt°. The findings exhibit optimum parameters for the TNOIMOD 1 at TNOIA=1.5, TNOIB=3.5, RNOIB=0.5164 and RNOIA = 1.477 for best NFmin and Гopt°, and RNOIA = 0.577 for best |Гopt| and RN. Meanwhile, as for the TNOIMOD 0, the proposed setting is NTNOI=5 (above 4 GHz), NTNOI=10 (below 3 GHz), and either 5 or 10 for 3 to 4 GHz. On top of that, the noise figure (NF) performance of a low-noise amplifier (LNA) was chosen to verify the transistor’s new NP settings. As a result, it was found that for application below 3 GHz, the TNOIMOD 0 at NTNOI=10 supersede the accuracy of the TNOIMOD 1.