Evaluation of Majority Charge Carrier and Impurity Concentration Using Hot Probe Method for Mono Crystalline Silicon (100) Wafer
| Main Authors: | Nahid Akter, Sajia Afrin, Md Abul Hossion, Md. Alamgir Kabir, Shirin Akter, Zahid Hasan Mahmood |
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| Format: | Article |
| Terbitan: |
, 2015
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| Subjects: | |
| Online Access: |
https://zenodo.org/record/4020029 |
Daftar Isi:
- Temperature dependent majority charge carrier concentration and impurity concentration calculations done for p-type commercial (100) silicon wafer of thickness 200 μm where the wafer is heated by hot probe set up. By solving basic conductivity equation of semiconductor and Continuity & Poisson’s equation thermally generated carrier ∆p and Q are found respectively for the same temperature range 50°C-80°C with an interval of 10°C. For lower temperature ∆p and Q values are not exactly same but for higher temperature those values agree with conventional measurement.