POWER SEMICONDUCTORS DEVICES FOR INDUSTRIAL PWM INVERTERS: STATE OF ART
| Main Authors: | Sena, Gianluca, Marani, Roberto, Perri, Anna Gina |
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| Format: | Article |
| Bahasa: | eng |
| Terbitan: |
, 2017
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| Subjects: | |
| Online Access: |
https://zenodo.org/record/3955545 |
Daftar Isi:
- In this paper the state of art of semiconductors devices for Industrial Pulse-Width Modulation (PWM) Inverters is presented. The last generations of Insulated Gate Bipolar Transistors (IGBTs), Silicon Carbide (SiC) MOSFETs and Gallium Nitride (GaN) Transistors are introduced and analysed. At last a comparison between Si-based IGBT and SiC MOSFET, obtained by SPICE simulations, is presented in order to identify the device which makes the PWM inverter more efficient.
- Paper published in International Journal of Advances in Engineering & Technology, Vol. 10, Issue 1, pp. 52-65, Feb., 2017. Available online at: http://www.ijaet.org/media/6I37-IJAET1001113-v10-iss1-pp52-65.pdf