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Plasma-Assisted Chemical Vapor Deposition of Gold for ULSI Multilevel Metallization Schemes

Tersimpan di:
Main Authors: Lou, Ishing, Chen, Ling, Eisenbraun, Eric, Schermerhorn, James, Toscano, Paul, Thomas, Michael, Arkles, Barry, Kaloyeros, Alain
Format: Book publication-section
Bahasa: eng
Terbitan: Materials Research Society , 1994
Subjects:
Chemical Vapor Deposition (CVD)
Gold
Metallization
dimethylgoldpentanedionate
semiconductor fabrication
Online Access: https://zenodo.org/record/3700610
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Internet

https://zenodo.org/record/3700610

Lihat Juga

  • Low Temperature In-Situ Sequential Chemical Vapor Deposition of Ti:TiN Ultrathin Bilayers for ULSI Barrier Applications
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    oleh: Kelsey, Jean E, et al.
    Terbitan: (1999)
  • Low temperature inorganic chemical vapor deposition of Ti–Si–N diffusion barrier liners for gigascale copper interconnect applications
    oleh: Eisenbraun, Eric, et al.
    Terbitan: (2000)
  • Silicon Nitride Films Deposited by Atmospheric Pressure Chemical Vapor Deposition
    oleh: Lin, Xian, et al.
    Terbitan: (1998)
  • Process for thin film deposition through controlled formation of vapor phase transient species US Pat. 11,248,291
    oleh: Arkles, Barry C., et al.
    Terbitan: (2022)
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