Plasma-Assisted Chemical Vapor Deposition of Gold for ULSI Multilevel Metallization Schemes
| Main Authors: | Lou, Ishing, Chen, Ling, Eisenbraun, Eric, Schermerhorn, James, Toscano, Paul, Thomas, Michael, Arkles, Barry, Kaloyeros, Alain |
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| Format: | Book publication-section |
| Bahasa: | eng |
| Terbitan: |
Materials Research Society
, 1994
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| Subjects: | |
| Online Access: |
https://zenodo.org/record/3700610 |
Daftar Isi:
- A hydrogen plasma-assisted CVD deposition (PA-CVD) process was employed to deposit device quality thin gold films for multilevel intra- and inter-chip interconnect schemes. The precursor employed in the PA-CVD process was dimethylgold acetoacetonate DMG(acac).