On Optimization of Doping of a Hetero structure During Manufacturing of P-I-N-Diodes
| Main Authors: | E.L. Pankratov, E.A. Bulaeva |
|---|---|
| Format: | Article Journal |
| Terbitan: |
, 2018
|
| Subjects: | |
| Online Access: |
https://zenodo.org/record/1489476 |
Daftar Isi:
- We introduce an approach of manufacturing of a p-i-n-heterodiodes. The approach based on using a δdoped heterostructure, doping by diffusion or ion implantation of several areas of the heterostructure. After the doping the dopant and/or radiation defects have been annealed. We introduce an approach to optimize annealing of the dopant and/or radiation defects. We determine several conditions to manufacture more compact p-i-n-heterodiodes.